Infineon Expands Automotive Portfolio with Next-Gen High-Voltage IGBT Chips for Enhanced Electric Drivetrain Performance

Infineon Technologies AG is addressing the increasing demand for high-voltage IGBT solutions in the automotive sector by unveiling a new generation of advanced semiconductor products. This lineup includes the third-generation EDT3 (Electric Drive Train) chips, which support both 400 V and 800 V systems, alongside the RC-IGBT chips that are specifically optimized for 800 V architectures. These innovations significantly boost the performance and efficiency of electric drivetrain systems, reinforcing their suitability for a wide range of automotive applications.

Engineered as bare dies, the EDT3 and RC-IGBT chips are crafted to deliver robust quality and dependable performance, empowering system developers to design custom-tailored power modules. Compared to its predecessor, the EDT2, the EDT3 generation achieves up to 20 percent lower total losses under high-load conditions while retaining excellent efficiency during low-load operation. This leap in performance is attributed to refined chip-level optimizations that both minimize electrical losses and enable a higher maximum junction temperature—achieving a well-balanced tradeoff between performance and energy efficiency. These improvements help electric vehicles utilizing EDT3 chips extend their driving range and reduce power consumption, paving the way for more sustainable and economical mobility.

Available in 750 V and 1200 V voltage classes, EDT3 chipsets are capable of delivering high output currents, making them an ideal choice for primary inverter systems across various electric vehicle categories, including battery electric vehicles (BEVs), plug-in hybrid electric vehicles (PHEVs), and range-extended electric vehicles (REEVs). Their smaller footprint and refined design support the construction of compact power modules, thereby contributing to lower overall system costs. Additionally, with a peak virtual junction temperature rating of 185°C and collector-emitter voltage ratings up to 750 V and 1200 V, these devices are particularly well-suited for high-performance automotive applications, enabling more efficient, reliable, and longer-range powertrain designs.

The 1200 V RC-IGBT variant brings further innovation by combining IGBT and diode functionalities within a single die, offering higher current density than traditional discrete IGBT and diode chipsets. This integration leads to cost advantages through increased power density, scalable die sizes, and reduced assembly complexity—benefits that contribute to a more streamlined and economical system design.

Infineon has also integrated its cutting-edge EDT3 IGBT technology into the HybridPACK™ Drive G2 power module series, delivering improved module performance across the portfolio. Supporting power outputs of up to 250 kW within the 750 V and 1200 V classes, this module features enhanced usability and new functionalities such as integration support for next-generation phase current sensors and on-chip temperature sensing. These features enable further cost optimization and functional integration at the system level.

To meet diverse customer requirements, all chip devices are offered with tailored chip layouts, including integrated on-chip sensors for temperature and current monitoring. Furthermore, options for metallization suitable for sintering, soldering, and wire bonding processes are available upon request, providing additional flexibility for module integration and manufacturing.